发明名称 |
RESISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
A method for forming a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, forming a transistor having a polysilicon dummy gate in the transistor region and a polysilicon main portion with two doped regions positioned at two opposite ends in the resistor region, performing an etching process to remove the polysilicon dummy gate to form a first trench and remove portions of the doped regions to form two second trenches, and forming a metal gate in the first trench to form a transistor having the metal gate and metal structures respectively in the second trenches to form a resistor.
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申请公布号 |
US2013049168(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113215237 |
申请日期 |
2011.08.23 |
申请人 |
YANG JIE-NING;HSU SHIH-CHIEH;WANG YAO-CHANG;PAI CHI-HORN;TSENG CHI-SHENG;TSENG KUN-SZU;CHOU YING-HUNG;YEH CHIU-HSIEN |
发明人 |
YANG JIE-NING;HSU SHIH-CHIEH;WANG YAO-CHANG;PAI CHI-HORN;TSENG CHI-SHENG;TSENG KUN-SZU;CHOU YING-HUNG;YEH CHIU-HSIEN |
分类号 |
H01L21/8234;H01L27/06 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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