发明名称 |
SOLID STATE LIGHT EMITTING SEMICONDUCTOR STRUCTURE AND EPITAXY GROWTH METHOD THEREOF |
摘要 |
A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.
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申请公布号 |
US2013048941(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213443446 |
申请日期 |
2012.04.10 |
申请人 |
YU CHANG-CHIN;LIN MONG-EA;LEXTAR ELECTRONICS CORPORATION |
发明人 |
YU CHANG-CHIN;LIN MONG-EA |
分类号 |
H01L33/06;B82Y40/00;H01L29/06 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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