| 摘要 |
<p>In this photoelectric conversion element, an i-type nitride semiconductor layer (400) is sandwiched between a nitride semiconductor base layer (401) and a nitride semiconductor light reflecting layer (402). An In composition ratio (y0) of the i-type nitride semiconductor layer (400), an In composition ratio (y1) of the nitride semiconductor base layer (401), and an In composition ratio (y2) of the nitride semiconductor light reflecting layer (402) satisfy the relational expression of 0<y2<y1<y0, and the thickness of the nitride semiconductor base layer (401) is equal to or more than a critical film thickness.</p> |
