Method for producing hyperspectral Fabry-Perot filter, involves filling silicon oxide layer in gaps after removing resist mask and performing leveling and thinning of surface of silicon oxide layer by chemical mechanical polishing

摘要

#CMT# #/CMT# The method involves providing bragg mirror having alternate sequence of silicon layer (1) and silicon oxide layer (2) with different refractive indices. A cavity defined by a mixed layer of silicon and silicon oxide is formed. A thin layer of silicon oxide is formed as an etch stop layer (3) on silicon layer. The thick layer of precursor material is formed by a resist mask. The silicon oxide layer is filled in gaps after removing resist mask. The leveling and thinning of surface of silicon oxide layer are performed by chemical mechanical polishing. #CMT# : #/CMT# A mixing layer (4) is formed in layer stack of Fabry-Perot filter. The silicon layer of specific thickness is deposited on flat surface. The holes are formed in silicon layer. The thickness of etch stop layer is smaller than thickness of silicon layer. #CMT#USE : #/CMT# Method for producing hyperspectral Fabry-Perot filter with complementary metal oxide semiconductor (CMOS)-compatible production steps. #CMT#ADVANTAGE : #/CMT# The manufacturing cost of filter is reduced. The integration density of filter is improved. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawings show the schematic views illustrating the process of producing filter. 1 : Silicon layer 2 : Silicon oxide layer 3 : Etch stop layer 4 : Mixture layer 5 : Holes.