| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element manufacturing method which can manufacture a light-emitting element at high yield, which includes a light reflection layer formed on a rear face of a sapphire substrate. <P>SOLUTION: A light-emitting element manufacturing method comprises: a process of forming modified regions 7a, 7b inside a sapphire substrate 2 along scheduled cutting lines 5a, 5b by irradiating laser beams L1 along the scheduled cutting lines 5a, 5b in such a manner as to focus on a focal point P1 inside the sapphire substrate 2 including a III-V compound semiconductor layer 17 formed on a surface 2a and using a rear face 2b of the substrate 2 as a laser beam incident surface; a process of subsequently forming a light reflection layer on the rear face 2b of the substrate 2; and a process of subsequently cutting the substrate 2, the semiconductor layer 17 and the light reflection layer along the scheduled cutting lines 5a, 5b by causing cracks occurred originating on the modified regions 7a, 7b to extend in a thickness direction of the substrate to manufacture the light-emitting elements. <P>COPYRIGHT: (C)2013,JPO&INPIT |
