发明名称 METHOD FOR CHEMICAL-MECHANICAL POLISHING TUNGSTEN
摘要 <P>PROBLEM TO BE SOLVED: To provide new chemical-mechanical polishing compositions and methods for use as tungsten buff formulations for achieving better topography performance. <P>SOLUTION: The method comprises: providing a substrate containing tungsten; providing a chemical-mechanical polishing slurry composition, and a chemical-mechanical polishing pad which has a polishing surface; creating dynamic contact at an interface between the polishing surface of the chemical-mechanical polishing pad and the substrate with down force of 0.69 to 34.5 kPa; and dispensing the chemical-mechanical polishing slurry composition onto the chemical-mechanical polishing pad at or near the interface between the chemical-mechanical polishing pad and the substrate, where the substrate is polished, and some of the tungsten is removed from the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013042131(A) 申请公布日期 2013.02.28
申请号 JP20120173339 申请日期 2012.08.03
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 GUO YI;JERRY LEE;RAYMOND L LAVOIE JR;ZHANG GUANGYUN
分类号 H01L21/304;B24B37/00;B24B37/24;C09K3/14 主分类号 H01L21/304
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