发明名称 |
METHOD FOR CHEMICAL-MECHANICAL POLISHING TUNGSTEN |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide new chemical-mechanical polishing compositions and methods for use as tungsten buff formulations for achieving better topography performance. <P>SOLUTION: The method comprises: providing a substrate containing tungsten; providing a chemical-mechanical polishing slurry composition, and a chemical-mechanical polishing pad which has a polishing surface; creating dynamic contact at an interface between the polishing surface of the chemical-mechanical polishing pad and the substrate with down force of 0.69 to 34.5 kPa; and dispensing the chemical-mechanical polishing slurry composition onto the chemical-mechanical polishing pad at or near the interface between the chemical-mechanical polishing pad and the substrate, where the substrate is polished, and some of the tungsten is removed from the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013042131(A) |
申请公布日期 |
2013.02.28 |
申请号 |
JP20120173339 |
申请日期 |
2012.08.03 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC |
发明人 |
GUO YI;JERRY LEE;RAYMOND L LAVOIE JR;ZHANG GUANGYUN |
分类号 |
H01L21/304;B24B37/00;B24B37/24;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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