| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a titania-doped quartz glass having no defects, high flatness and low expansion. <P>SOLUTION: The method for manufacturing a titania-doped quartz glass includes mixing a silicon source raw material gas and a titanium source raw material gas at 200 to 400°C, and thereafter oxidizing or flame hydrolyzing the mixture by a combustible gas or a combustion supporting gas. Thereby, a titania-doped quartz glass can be obtained which is suitable for an EUV lithography member having no recess defects of a volume of ≥30,000 nm<SP POS="POST">3</SP>on the surface, particularly a substrate for an EUV lithography photomask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
