| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric integrated circuit board and a method of manufacturing the same. <P>SOLUTION: There is provided a photoelectric integrated circuit board having an optical element region and an electronic element region that include buried insulating layers having a different thickness from each other. The buried insulating layer of the optical element region is formed deeper and thicker than the buried insulating layer of the electronic element region. In a region without the buried insulating layer, a MEMS structure is formed. The buried insulating layer is formed by implanting at least one selected from a group containing oxygen, nitrogen, and neon. Further, the buried insulating layer of the optical element region and the buried insulating layer of the electronic element region each have a different upper position from a surface of the photoelectric integrated circuit board. <P>COPYRIGHT: (C)2013,JPO&INPIT |
