发明名称 |
METHODS FOR IN-SITU CHAMBER DRY CLEAN IN PHOTOMASK PLASMA ETCHING PROCESSING CHAMBER |
摘要 |
Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber dry clean after photomask plasma etching includes performing an in-situ pre-cleaning process in a plasma processing chamber, supplying a pre-cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber while performing the in-situ pre-cleaning process, providing a substrate into the plasma processing chamber, performing an etching process on the substrate, removing the substrate from the substrate, and performing an in-situ post cleaning process by flowing a post cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber.
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申请公布号 |
US2013048606(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113222088 |
申请日期 |
2011.08.31 |
申请人 |
MAO ZHIGANG;CHEN XIAOYI;YU KEVEN;GRIMBERGEN MICHAEL;CHANDRAHOOD MADHAVI;SABHARWAL AMITABH;KUMAR AJAY |
发明人 |
MAO ZHIGANG;CHEN XIAOYI;YU KEVEN;GRIMBERGEN MICHAEL;CHANDRAHOOD MADHAVI;SABHARWAL AMITABH;KUMAR AJAY |
分类号 |
B08B5/00;B08B7/00;C23F1/02 |
主分类号 |
B08B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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