ION BEAM PROCESSING OF SIC FOR FABRICATION OF GRAPHENE STRUCTURES
摘要
<p>A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The ions can be Si, C, or other ions such as Au. The annealing can be carried out using a thermal source of heating or by irradiation with at least one laser beam or other high energy beam.</p>
申请公布号
WO2013028861(A1)
申请公布日期
2013.02.28
申请号
WO2012US52061
申请日期
2012.08.23
申请人
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;GILA, BRENT, PAUL;APPLETON, BILL, R.;LEMAITRE, MAXIME, G.;TONGAY, SEFAATTIN