| 摘要 |
<p>In a photoelectric conversion element (100), an i-type nitride semiconductor layer (400) is sandwiched between a first light reflecting layer (401) and a second light reflecting layer (402). An In composition ratio (y0) of the i-type nitride semiconductor layer (400), an In composition ratio (y1) of the first light reflecting layer (401), and an In composition ratio (y2) of the second light reflecting layer (402) satisfy the relational expression of 0<y2<y1<y0, and the thickness of the first light reflecting layer (401) is equal to or more than a critical film thickness.</p> |
