| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, which allows formation of a pattern satisfying demands for high sensitivity and high resolution (for example, high resolving power and low line edge roughness (LER)) as well as reducing a residue in an unexposed part, and to provide a resist pattern, a developing solution, a crosslinkable negative type chemically amplified resist composition for organic solvent development, a mold for nanoimprint, and a photomask. <P>SOLUTION: The method for forming a resist pattern includes the steps of, in the following sequence, forming a resist film by using a resist composition described below, exposing the film and developing the film after exposure by using a developing solution containing an ester-based solvent having 7 or 8 carbon atoms. The resist composition is a negative type chemically amplified resist composition comprising: a polymeric compound having a repeating unit expressed by general formula (1); a phenolic compound having two or more benzene rings and four or more alkoxymethyl groups, which crosslinks the above polymeric compound by an action of an acid; and a compound generating an acid by irradiation with actinic rays or radiation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
