发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition having high resolution and giving a good pattern shape, and a pattern forming method using the positive resist composition in immersion lithography that is carried out by forming a protective film. <P>SOLUTION: The positive resist composition comprises: (A) a resin having a methacrylic repeating unit including an adamantyl at a tertiary carbon as an acid labile group and a methacrylic repeating unit having a cyclic structure formed by a tertiary carbon, the alkali solubility of which is enhanced by an acid; (B) a photoacid generator; (C) a compound expressed by the general formula (3); and (D) a solvent. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013041126(A) 申请公布日期 2013.02.28
申请号 JP20110178205 申请日期 2011.08.17
申请人 SHIN ETSU CHEM CO LTD 发明人 TANIGUCHI RYOSUKE;SEKI AKIHIRO;FUNATSU AKIYUKI;KOBAYASHI KATSUHIRO
分类号 G03F7/039;C08F220/18;C08F220/28;H01L21/027 主分类号 G03F7/039
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