发明名称 |
VAPOR GROWTH APPARATUS AND VAPOR GROWTH METHOD |
摘要 |
A vapor growth apparatus including: a reaction chamber configured to lod a wafer; a gas supply mechanism which supplies process gas into the reaction chamber; a support unit for placing the wafer; a heater for heating the wafer from below; a rotation control unit for rotating the wafer; a gas exhaust mechanism including an exhaust port which exhausts gas from the reaction chamber; a reflector provided below the heater for reflecting heat from the heater onto a rear face of the wafer; and a vertical drive unit for vertically moving the reflector.
|
申请公布号 |
US2013047916(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213598792 |
申请日期 |
2012.08.30 |
申请人 |
NISHIBAYASHI MICHIO;YAMADA TAKUMI;SATO YUUSUKE |
发明人 |
NISHIBAYASHI MICHIO;YAMADA TAKUMI;SATO YUUSUKE |
分类号 |
C30B25/10;C30B25/12;C30B25/16 |
主分类号 |
C30B25/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|