| 摘要 |
Actuating a semiconductor device includes providing a transistor that includes a substrate and a first electrically conductive material layer, including a reentrant profile, positioned on the substrate. An electrically insulating material layer is conformally positioned over the first electrically conductive material layer and at least a portion of the substrate. A semiconductor material layer conforms to and is in contact with the electrically insulating material layer. A second electrically conductive material layer and third electrically conductive material layer are nonconformally positioned over and in contact with a first portion of the semiconductor material layer and a second portion of the semiconductor material layer, respectively. A voltage is applied between the second electrically conductive material layer and the third electrically conductive material layer and to the first electrically conductive material layer to electrically connect the second and the third electrically conductive material layers.
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