发明名称 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT
摘要 There are provided a thin-film transistor that leads to the improved performance and production stability, and a method of manufacturing the thin-film transistor, and an electronic unit using the thin-film transistor. The thin-film transistor includes: an organic semiconductor section including first and second surfaces; a source electrode section adjacent to the first surface; and a drain electrode section adjacent to the second surface. One or both of the source electrode section and the drain electrode section are highly-conductive electrode sections containing an organic semiconductor material higher in conductivity than a material of the organic semiconductor section.
申请公布号 US2013049118(A1) 申请公布日期 2013.02.28
申请号 US201213587145 申请日期 2012.08.16
申请人 KATSUHARA MAO;SONY CORPORATION 发明人 KATSUHARA MAO
分类号 H01L51/10;H01L21/336;H01L29/786 主分类号 H01L51/10
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