发明名称 |
THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT |
摘要 |
There are provided a thin-film transistor that leads to the improved performance and production stability, and a method of manufacturing the thin-film transistor, and an electronic unit using the thin-film transistor. The thin-film transistor includes: an organic semiconductor section including first and second surfaces; a source electrode section adjacent to the first surface; and a drain electrode section adjacent to the second surface. One or both of the source electrode section and the drain electrode section are highly-conductive electrode sections containing an organic semiconductor material higher in conductivity than a material of the organic semiconductor section. |
申请公布号 |
US2013049118(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213587145 |
申请日期 |
2012.08.16 |
申请人 |
KATSUHARA MAO;SONY CORPORATION |
发明人 |
KATSUHARA MAO |
分类号 |
H01L51/10;H01L21/336;H01L29/786 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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