发明名称 |
DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS |
摘要 |
Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device. |
申请公布号 |
US2013052806(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213591718 |
申请日期 |
2012.08.22 |
申请人 |
BERTRAM, JR. RONALD THOMAS;WERKHOVEN CHRISTIAAN J.;ARENA CHANTAL;LINDOW ED;SOITEC |
发明人 |
BERTRAM, JR. RONALD THOMAS;WERKHOVEN CHRISTIAAN J.;ARENA CHANTAL;LINDOW ED |
分类号 |
C23C16/458;B23P11/00;H01L21/20 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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