发明名称 CVD REACTOR WITH GAS FLOW VIRTUAL WALLS
摘要 A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.
申请公布号 US2013052346(A1) 申请公布日期 2013.02.28
申请号 US201113222840 申请日期 2011.08.31
申请人 HIGASHI GREGG;LERNER ALEXANDER;SORABJI KHURSHED;WASHINGTON LORI D.;ALTA DEVICES, INC. 发明人 HIGASHI GREGG;LERNER ALEXANDER;SORABJI KHURSHED;WASHINGTON LORI D.
分类号 C23C16/455 主分类号 C23C16/455
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