| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMOS solid state imaging element which can increase the number of saturation charges of a PD to achieve improvement in image quality. <P>SOLUTION: A pixel includes a photoelectric conversion part 31 formed on a semiconductor substrate 61, a lateral pinning layer 82 formed on lateral faces of the photoelectric conversion part 31 and a surface pinning layer 81 formed on a surface side of the photoelectric conversion part 31. A manufacturing process of a pixel comprises forming a trench 62' for embedding a pixel isolation part on a lateral face part in a region in which the photoelectric conversion part 31 is formed, and, in an opening state of the trench 62', simultaneously forming the lateral pinning layer 82 and the surface pinning layer 81 by performing ion implantation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
