发明名称 |
GAS TREATMENT METHOD, GAS TREATMENT APPARATUS, METHOD OF FORMING FINE POWDER, AND FINE POWDER FORMING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To remove a hydride of silicon from gas containing the hydride of silicon in a simpler manner than conventional ones while suppressing increase in costs. <P>SOLUTION: A gas treatment method removes the hydride of silicon from gas containing the hydride of silicon. The gas treatment method is adopted, which is characterized in that bubbles having a diameter of 10 μm or less and comprising the gas containing the hydride of silicon are brought into contact with water. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013039521(A) |
申请公布日期 |
2013.02.28 |
申请号 |
JP20110177432 |
申请日期 |
2011.08.15 |
申请人 |
TAIYO NIPPON SANSO CORP |
发明人 |
TSUKUNE ATSUHIRO;ISHIHARA YOSHIO |
分类号 |
B01D53/14;B01D53/18;B01D53/46;B01D53/86 |
主分类号 |
B01D53/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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