发明名称 GAS TREATMENT METHOD, GAS TREATMENT APPARATUS, METHOD OF FORMING FINE POWDER, AND FINE POWDER FORMING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To remove a hydride of silicon from gas containing the hydride of silicon in a simpler manner than conventional ones while suppressing increase in costs. <P>SOLUTION: A gas treatment method removes the hydride of silicon from gas containing the hydride of silicon. The gas treatment method is adopted, which is characterized in that bubbles having a diameter of 10 &mu;m or less and comprising the gas containing the hydride of silicon are brought into contact with water. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013039521(A) 申请公布日期 2013.02.28
申请号 JP20110177432 申请日期 2011.08.15
申请人 TAIYO NIPPON SANSO CORP 发明人 TSUKUNE ATSUHIRO;ISHIHARA YOSHIO
分类号 B01D53/14;B01D53/18;B01D53/46;B01D53/86 主分类号 B01D53/14
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