发明名称 WAFER-LEVEL PASSIVATION STRUCTURE OF MICRO-DEVICE, MICRO-DEVICE INCLUDING THE SAME, AND METHODS OF MANUFACTURING WAFER-LEVEL PASSIVATION STRUCTURE AND MICRO-DEVICE
摘要 A wafer-level passivation structure of a micro-device, a micro-device including the same, and methods of manufacturing the wafer-level passivation structure and the micro-device may be provided. In particular, the passivation structure may include a spacer that is disposed on a substrate, covers a portion of the first surface, and has an elastic property, and an anti-adhesion layer that is disposed on a surface of the substrate between the spacer. The spacer may form a lattice pattern. The spacer may be formed of a silicon. The anti-adhesion layer may be a metallic film, an oxide film, or a nitride film.
申请公布号 US2013052394(A1) 申请公布日期 2013.02.28
申请号 US201213562968 申请日期 2012.07.31
申请人 LEE JEONG-YUB;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JEONG-YUB
分类号 B81B7/02;B32B3/08;B32B37/30;B32B38/10;G02B3/12 主分类号 B81B7/02
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