发明名称 |
FINFET DEVICE HAVING A CHANNEL DEFINED IN A DIAMOND-LIKE SHAPE SEMICONDUCTOR STRUCTURE |
摘要 |
The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.
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申请公布号 |
US2013049068(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113220979 |
申请日期 |
2011.08.30 |
申请人 |
LIN YOU-RU;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YOU-RU;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/772;H01L21/20 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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