发明名称 |
GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE |
摘要 |
A group-III nitride semiconductor laser device includes an n-type nitride semiconductor region, an active layer provided over the n-type nitride semiconductor region, a first p-type nitride semiconductor region provided over the active layer, a current confinement layer which is provided over the first p-type nitride semiconductor region and has an opening extending in a optical cavity direction, and a second p-type nitride semiconductor region re-grown on the first nitride semiconductor region and the current confinement layer after the formation of the opening of the current confinement layer. The interface between the first p-type nitride semiconductor region and the second p-type nitride semiconductor region includes a semi-polar plane. At least one of the first or second p-type semiconductor regions includes a highly doped p-type semiconductor layer forming an interface with the first and second p-type semiconductor regions and have a p-type impurity level of 1×1020 cm−3 or greater.
|
申请公布号 |
US2013051418(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213556944 |
申请日期 |
2012.07.24 |
申请人 |
SUMITOMO TAKAMICHI;UENO MASAKI;YOSHIZUMI YUSUKE;YOSHIDA TAKAHISA;ADACHI MASAHIRO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SUMITOMO TAKAMICHI;UENO MASAKI;YOSHIZUMI YUSUKE;YOSHIDA TAKAHISA;ADACHI MASAHIRO |
分类号 |
H01S5/323 |
主分类号 |
H01S5/323 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|