发明名称 |
ON-CHIP RADIATION DOSIMETER |
摘要 |
A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
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申请公布号 |
US2013049130(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213569745 |
申请日期 |
2012.08.08 |
申请人 |
GORDON MICHAEL S.;RODBELL KENNETH P.;YAU JENG-BANG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GORDON MICHAEL S.;RODBELL KENNETH P.;YAU JENG-BANG |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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