PHASE CHANGE MEMORY AND METHOD OF FABRICATING SAME

摘要

A fine pitch phase change random access memory (PCRAM) design and method of fabricating same are disclosed. One embodiment is a phase change memory (PCM) cell comprising a spacer defining a rectangular reaction area and a phase change material layer disposed within the reaction area. The PCM cell further comprises a protection layer disposed over the GST film layer and within the area defined by the spacer; and a capping layer disposed over the protection layer and the spacer.