| 摘要 |
1,255,414. Semi-conductor devices. GENERAL ELECTRIC CO. 28 Feb., 1969 [7 March, 1968], No. 11023/69. Heading H1K. A SiO 2 film 13 separating an electrode 20 from a semi-conductor body 11 is protected against breakdown by the provision of a film 29 of Si 3 N 4 in an aperture in the oxide film 13 and an electrode 30 on the nitride film 29 electrically connected to the first electrode 20. The leakage current characteristics -of Si 3 N 4 are such that at relatively low applied voltages device performance is not impaired, but in the presence of high voltage transients breakdown of the oxide film 13 is prevented by increased leakage through the nitride film 29. The device shown is a Si MOST, but the invention is equally applicable to an MNOST. In both cases the gate oxide insulation is protected. A further oxide layer 21 is also provided in the device shown, overlying the gate electrode 20, and breakdown of the film 13 due to overloading of metal interconnections deposited on the layer 21 and connected to the source or drain electrodes 22, 23 may be prevented by the provision of further nitride films, similar to the film 29, underlying portions of the interconnections. The same principle may be used to provide oxide protection in planar diffused transistors or integrated circuits. |
