发明名称 PATTERN GENERATION DEVICE, PATTERN GENERATION PROGRAM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce a collapse or omission failure caused by fining of resist patterns. <P>SOLUTION: A pattern generation device 11 includes a light intensity calculation unit 11a for calculating light intensity of a pattern formed based on exposure and an area around the pattern, a light intensity evaluation unit 11b for evaluating light intensity of the pattern and an area around the pattern, and a data output unit 11c for outputting correction data on the pattern on the basis of evaluation results of the light intensity evaluation unit 11b. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013041155(A) 申请公布日期 2013.02.28
申请号 JP20110178473 申请日期 2011.08.17
申请人 TOSHIBA CORP 发明人 INOUE AI;NAKAZAWA TAKASHI;OBARA TAKASHI;MASUKAWA KAZUYUKI;HASHIMOTO TAKAKI
分类号 G03F1/68 主分类号 G03F1/68
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