DATA READ CIRCUIT, A NON-VOLATILE MEMORY DEVICE HAVING THE SAME, AND A METHOD OF READING DATA FROM THE NON-VOLATILE MEMORY DEVICE

摘要

A non-volatile memory device including a cell array, which includes a plurality of memory cells, and a sense amplification circuit. The sense amplification circuit is configured to receive a data voltage of a memory cell, a first reference voltage and a second reference voltage during a data read operation of the memory cell, generate differential output signals based on a voltage level difference between the data voltage and the first and second reference voltages, and output the differential output signals as data read from the memory cell.