SILICIDE GAP THIN FILM TRANSISTOR

摘要

This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate including a silicon layer on the substrate surface is provided. A metal layer is formed on the silicon layer. A first dielectric layer is formed on the metal layer and exposed regions of the substrate surface. The metal layer and the silicon layer are treated, and the metal layer reacts with the silicon layer to form a silicide layer and a gap between the silicide layer and the dielectric layer. An amorphous silicon layer is formed on the first dielectric layer. The amorphous silicon layer is heated and cooled. The amorphous silicon layer overlying the substrate surface cools at a faster rate than the amorphous silicon layer overlying the gap.