发明名称 PHOTOELECTRIC CONVERSION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which exhibits small light absorption loss in a window layer and has high conversion efficiency. <P>SOLUTION: The photoelectric conversion device includes: a first silicon semiconductor layer and a translucent semiconductor layer on one surface of a crystalline silicon substrate; a second silicon semiconductor layer and a first electrode which are partially formed on the translucent semiconductor layer; and a third silicon semiconductor layer, a fourth silicon semiconductor layer, and a second electrode on the other surface of the crystalline silicon substrate. The translucent semiconductor layer is constituted of an organic compound and an inorganic compound. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013042126(A) 申请公布日期 2013.02.28
申请号 JP20120159879 申请日期 2012.07.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L31/04 主分类号 H01L31/04
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