| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device that has a high operating speed. <P>SOLUTION: A nonvolatile storage device related to one embodiment comprises: a driving circuit for outputting a writing voltage; and a memory cell in which data are written by being applied with the writing voltage. In a case where the driving circuit repeats an output of the writing voltage n times, n is an integer 3 or larger, where the writing voltage in an output at a k-th time, (k is an integer 2 or larger and n or smaller), is defined as Vpgm(k), a constant voltage is defined as Δv1, a time for continuing the output at the k-th time is defined as Tpgm(k) and a fixed time is defined as Δt1, the driving circuit outputs the writing voltage such that Vpgm(k), Δv1, Tpgm(k) and Δt1 satisfy the following mathematical expressions; Vpgm(k)=Vpgm(k-1)+Δv1 and Tpgm(k)=Tpgm(k-1)+Δt1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
