发明名称 MULTIPORT MEMORY ELEMENT AND SEMICONDUCTOR DEVICE AND SYSTEM INCLUDING THE SAME
摘要 Provided is a multiport memory element and a semiconductor device including the same. The multiport memory element includes: a first port; a second port different from the first port; a first memory region accessible by a first processor which is coupled to the first port; a second memory region accessible by a second processor which is coupled to the second port; and a common memory region accessible by both the first processor and the second processor, and including a plurality of banks, wherein while the first processor accesses a first bank among the plurality of banks, the second processor accesses a second bank among the plurality of banks.
申请公布号 US2013054885(A1) 申请公布日期 2013.02.28
申请号 US201213590780 申请日期 2012.08.21
申请人 CHOI JAE-YOUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JAE-YOUNG
分类号 G06F12/00 主分类号 G06F12/00
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