METHOD FOR THE CHARACTERISATION OF AT LEAST ONE LAYER OF MATERIAL COMPRISING SEMICONDUCTOR NANOCRYSTALS

摘要

The invention relates to a method for the characterisation of a layer (110) of material comprising semiconductor nanocrystals (108), including the following steps consisting in: forming an alternating stack of m first layers (110) having a complex refractive index n1 and m second layers (106) having a complex refractive index n2 that is different from n1, in which the first layers (110) comprise semiconductor nanostructures (108), said stack being disposed on a substrate (102), wherein m = 2; measuring the reflectivity of the stack in a wavelength range; calculating n1 on the basis of m, the thicknesses of the first and second layers and the stack reflectivity measurement, using an optical transfer-matrix calculation; and calculating the capacitance C1 of one of the first layers on the basis of the measurement of the capacitance of the stack and the substrate.