| 摘要 |
<p>POLISHING SOLUTION FOR COPPER POLISHING, AND POLISHING METHOD USING SAME 5 The polishing solution for copper polishing of the invention comprises afirst organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid 10 and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass% or greater, the amino acid content is 0.30 mass% or greater, the protective film-forming agent content is 0.10 mass% or greater, based 15 on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5. No Suitable Figure</p> |
