发明名称 |
PARASITIC CAPACITANCE REDUCTION IN MOSFET BY AIRGAP ILD |
摘要 |
The instant disclosure relates to MOSFET semiconductor structures exhibiting a reduced parasitic capacitance, as well as methods of making the MOSFET semiconductor structures. The MOSFET semiconductor structures of the instant disclosure comprise an air-gap interlayer dielectric material between the contacts to the source/drain and gate structures and gate stack structures. The air-gap interlayer dielectric material causes the MOSFET semiconductor structures of the instant disclosure to have a reduced parasitic capacitance.
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申请公布号 |
US2013049132(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113216708 |
申请日期 |
2011.08.24 |
申请人 |
DORIS BRUCE B.;CHENG KANGGUO;KOBURGER, III CHARLES W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;CHENG KANGGUO;KOBURGER, III CHARLES W. |
分类号 |
H01L21/768;H01L29/78 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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