METHOD OF MANUFACTURE OF AN OPTOELECTRONIC DEVICE AND AN OPTOELECTRONIC DEVICE MANUFACTURED USING THE METHOD

摘要

A method of manufacture of an optoelectronic device includes the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H+) to create radiative defect centres in a photoactive region of the device, wherein at least some of said defect centres are G-centre complexes having the form Cs-SiI-Cs, where Cs is a substitutional carbon atom and S¾ is an interstitial silicon atom. An optoelectronic device (Figure 3) manufactured using the method is described.