发明名称 TECHNIQUE FOR STRAIN ENGINEERING IN SI-BASED TRANSISTORS BY USING EMBEDDED SEMICONDUCTOR LAYERS INCLUDING ATOMS WITH HIGH COVALENT RADIUS
摘要 By incorporating an atomic species of increased covalent radius, which may at least partially substitute germanium, a highly efficient strain mechanism may be provided, in which the risk of stress relief due to germanium conglomeration and lattice defects may be reduced. The atomic species of increased radius, such as tin, may be readily incorporated by epitaxial growth techniques on the basis of tin hydride.
申请公布号 KR101238432(B1) 申请公布日期 2013.02.28
申请号 KR20087013351 申请日期 2006.10.23
申请人 发明人
分类号 H01L21/20;H01L21/205 主分类号 H01L21/20
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