Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
摘要
<p>A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.</p>
申请公布号
AU2011285791(A1)
申请公布日期
2013.02.28
申请号
AU20110285791
申请日期
2011.08.03
申请人
QUALCOMM INCORPORATED
发明人
RAO, HARI M.;KIM, JUNG PILL;KANG, SEUNG H.;ZHU, XIAOCHUN;KIM, TAE HYUN;LEE, KANGHO;LI, XIA;HSU, WAH NAM;HAO, WUYANG;SUH, JUNGWON;YU, NICHOLAS K.;NOWAK, MATTHEW MICHAEL;MILLENDORF, STEVEN M.;ASHKENAZI, ASAF