发明名称 DEPOSITION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To enable only a material in a desired region to be deposited and thereby enable formation of a fine pattern, to reduce manufacturing cost by enhancing utilization efficiency of materials, and to shorten time period required for deposition and thereby improve productivity. <P>SOLUTION: A first substrate having on one surface a reflection layer with an opening, a light absorption layer, and a material layer formed in contact with the light absorption layer is used. A surface of the first substrate where the material layer is formed and a deposited surface of a second substrate are made opposite to each other. A laser beam is radiated from the other surface of the first substrate. A part of the material layer located at a position overlapping with the opening of the reflection layer is selectively heated to deposit the part of the material layer on the deposited surface of the second substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013041841(A) 申请公布日期 2013.02.28
申请号 JP20120226531 申请日期 2012.10.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;IBE TAKAHIRO;YOKOYAMA KOHEI;IKEDA TOSHIO;TAKEI NORIHITO
分类号 H05B33/10;C23C14/04;C23C14/24;C23C14/28;H01L51/50 主分类号 H05B33/10
代理机构 代理人
主权项
地址