SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a semiconductor element having excellent characteristics.

SOLUTION: A method of manufacturing a semiconductor device comprises: a step of forming a first conductive layer functioning as a gate electrode on a substrate; a step of forming a first insulating layer so as to cover the first conductive layer; a step of forming a semiconductor layer on the first insulating layer so that a part thereof overlaps the first conductive layer; a step of forming a second conductive layer so as to be electrically connected to the semiconductor layer; a step of forming a second insulating layer covering the semiconductor layer and the second conductive layer; a step of forming a third conductive layer electrically connected to the second conductive layer; a first heat treatment step before the step of forming the second insulating layer, after the step of forming the semiconductor layer; and a second heat treatment step after the step of forming the second insulating layer.

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