CHEMICAL-MECHANICAL POLISHING LIQUID

摘要

Disclosed in the present invention is a chemical-mechanical polishing liquid. The polishing liquid contains a carrier, abrasive particles, water soluble oxysalts and water soluble polyhydroxy compounds. The chemical-mechanical polishing liquid in the present invention has a relatively high SiO2 polishing rate and a high selection ratio of SiO2/Si3N4 removing rates, at the same time, and has a relatively high Ta polishing rate, and the selection ratio of Ta/Cu removing rates being close to 1.