| 摘要 |
<p>DOSE MEASUREMENT DEVICE FOR PLASMA IMMERSION ION IMPLANTATION 5 The present invention relates to a dose-measurementdevice for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC10 for estimating the ion current by taking the difference between said implantation current and the current fromsaid secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually15 insulated electrodes:a first repulsion electrode Gl, Al, Ti for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons;20•a second repulsion electrode G2, A2, T2 forrepelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; anda selection electrode G3, A3, T3, this electrode 25 also being provided with at least one orifice for passing electrons.Figure 130</p> |
