| 摘要 |
<P>PROBLEM TO BE SOLVED: To relax heat stress caused by a heat treatment in bonding of an element and a substrate, at centers of bumps. <P>SOLUTION: A semiconductor device comprises: an element 10; a substrate 20; and bumps 30 each including a first conductors 32, a second conductor 34 formed on the first conductor, a third conductor 36 formed on the second conductor, and a fourth conductor 38 formed on the third conductor, for electrically connecting the element and the substrate, in which one of the first conductor and the fourth conductor is bonded to the element and the other of the first conductor and the fourth conductor is bonded to the substrate. Each of the first conductor and the third conductor has a melting point higher than each of the second conductor and the fourth conductor. The fourth conductor has a melting point higher than the second conductor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
