| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that a conventional plasma CVD apparatus tends to cause a reaction between a decomposition species SiH<SB POS="POST">2</SB>and SiH<SB POS="POST">4</SB>parent molecule in depositing an amorphous Si film, for which the resulting higher order silane degrades light stability of a deposition film and generated powder lowers the operation rate of the apparatus. <P>SOLUTION: The gas decomposed by plasma is supplied from a small hole (12a) toward a plasma formation section on the surface of an electrode (2). A different type of gas from the gas is supplied from another small hole (12b) to generate a vapor phase reaction with gas after decomposition. By selecting gas supplied for vapor phase reaction as needed, a decomposition species harmful in process in plasma-decomposed gas is selectively removed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
