发明名称 WEAK BIT COMPENSATION FOR STATIC RANDOM ACCESS MEMORY
摘要 A static random access memory (SRAM) is provided. The SRAM includes a data line, a data line bar, and a current path block. The current path block includes at least two transistors configured to provide a current path for the data line in transition from a first logic voltage to a second logic voltage, wherein the current path block is connected to the data line and the data line bar during an entire duration of operation of the SRAM.
申请公布号 US2013051130(A1) 申请公布日期 2013.02.28
申请号 US201213660212 申请日期 2012.10.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE CHENG HUNG
分类号 G11C11/00 主分类号 G11C11/00
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