发明名称 TRANSISTOR INCLUDING SINGLE LAYER REENTRANT PROFILE
摘要 A transistor includes a substrate. An electrically conductive material layer, having a thickness, is positioned on the substrate. The electrically conductive material layer contains a reentrant profile such that one portion of the electrically conductive material overhangs another portion of the electrically conductive material. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate.
申请公布号 US2013049170(A1) 申请公布日期 2013.02.28
申请号 US201113218482 申请日期 2011.08.26
申请人 NELSON SHELBY F.;TUTT LEE W. 发明人 NELSON SHELBY F.;TUTT LEE W.
分类号 H01L29/06 主分类号 H01L29/06
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