发明名称 |
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND FABRICATION METHODS THEREOF |
摘要 |
A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form an MTJ cell, and forming a dielectric cap layer over a top surface and on a sidewall of the MTJ cell. The step of patterning and the step of forming the dielectric cap layer are in-situ formed in a same vacuum environment. A plasma treatment is performed on the dielectric cap layer to transform the dielectric cap layer into a treated dielectric cap layer, whereby the treated dielectric cap layer improves protection from H2O or O2, and thus degradation. |
申请公布号 |
US2013049144(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113215389 |
申请日期 |
2011.08.23 |
申请人 |
TANG BANG-TAI;TSAI CHENG-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TANG BANG-TAI;TSAI CHENG-YUAN |
分类号 |
H01L29/82;H01L21/8246 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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