| 摘要 |
AN OBJECT OF THE PRESENT INVENTION IS TO PROVIDE A HIGH-PERFORMANCE BONDING WIRE THAT IS SUITABLE FOR SEMICONDUCTOR MOUNTING TECHNOLOGY, SUCH AS STACKED CHIP BONDING, THINNING, AND FINE PITCH MOUNTING, WHERE WIRE LEAN (LEANING) AT AN UPRIGHT POSITION OF A BALL AND SPRING FAILURE CAN BE SUPPRESSED AND LOOP LINEARITY AND LOOP HEIGHT STABILITY ARE EXCELLENT. THIS BONDING WIRE FOR A SEMICONDUCTOR DEVICE INCLUDES A CORE MATERIAL MADE OF A CONDUCTIVE METAL, AND A SKIN LAYER FORMED ON THE CORE MATERIAL AND CONTAINING A METAL DIFFERENT FROM THE CORE MATERIAL AS A MAIN COMPONENT; WHEREIN A RELATIONSHIP BETWEEN AN AVERAGE SIZE (A) OF CRYSTAL GRAINS IN THE SKIN LAYER ON A WIRE SURFACE ALONG A WIRE CIRCUMFERENTIAL DIRECTION AND AN AVERAGE SIZE (B) OF CRYSTAL GRAINS IN THE CORE MATERIAL ON A NORMAL CROSS SECTION, THE NORMAL CROSS SECTION BEING A CROSS SECTION NORMAL TO A WIRE AXIS, SATISFIES AN INEQUALITY OF A/B ? 0.7. |
