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发明名称
HIGH BREAKDOWN VOLTAGE DOUBLE-GATE SEMICONDUCTOR DEVICE
摘要
申请公布号
EP2248181(A4)
申请公布日期
2013.02.27
申请号
EP20080725552
申请日期
2008.02.13
申请人
ACCO SEMICONDUCTOR, INC
发明人
MASLIAH, DENIS A.;BRACALE, ALEXANDRE G.;HUIN, FRANCIS C.;BARROUL, PATRICE J.
分类号
H01L29/93;H01L27/085;H01L27/098;H01L29/78
主分类号
H01L29/93
代理机构
代理人
主权项
地址
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