| 发明名称 |
Removing aluminum nitride sections |
| 摘要 |
Approaches for substantially removing bulk aluminum nitride (140) from one or more layers (150) epitaxially grown on the bulk aluminum nitride (AIN) are discussed. The bulk AIN (140) is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AIN can be measured and used to control etching. |
| 申请公布号 |
EP2562800(A2) |
申请公布日期 |
2013.02.27 |
| 申请号 |
EP20120181406 |
申请日期 |
2012.08.22 |
| 申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
KRUSOR, BRENT S.;CHUA, CHRISTOPHER L;WUNDERER, THOMAS;JOHNSON, NOBLE M.;CHENG, BOWEN |
| 分类号 |
H01L21/66;H01L21/67;H01L33/00 |
主分类号 |
H01L21/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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